IRG4RC10U Ver la hoja de datos (PDF) - International Rectifier

Número de pieza

componentes Descripción

Lista de partido

IRG4RC10U

INSULATED GATE BIPOLAR TRANSISTOR UltraFast Speed IGBT

International Rectifier 

IRG4RC10U

Electrical Characteristics @ TJ = 25°C (unless otherwise specified)

V(BR)CES

V(BR)ECS

∆V(BR)CES/∆TJ

VCE(ON)

VGE(th)

∆VGE(th)/∆TJ

gfe

ICES

IGES

Parameter

Collector-to-Emitter Breakdown Voltage

Emitter-to-Collector Breakdown Voltage „

Temperature Coeff. of Breakdown Voltage

Collector-to-Emitter Saturation Voltage

Gate Threshold Voltage

Temperature Coeff. of Threshold Voltage

Forward Transconductance …

Zero Gate Voltage Collector Current

Gate-to-Emitter Leakage Current

Min.

600

14

—

—

—

—

3.0

—

2.8

—

—

—

—

Typ. Max. Units

Conditions

——

——

0.54 —

2.15 2.6

V

V

V/°C

VGE = 0V, IC = 250µA

VGE = 0V, IC = 1.0A

VGE = 0V, IC = 1.0mA

IC = 5.0A

VGE = 15V

2.61 —

V

IC = 8.5A

See Fig.2, 5

2.30 —

IC = 5.0A , TJ = 150°C

— 6.0

VCE = VGE, IC = 250µA

-8.7 — mV/°C VCE = VGE, IC = 250µA

4.2 — S VCE = 100V, IC = 5.0A

— 250

VGE = 0V, VCE = 600V

— 2.0 µA VGE = 0V, VCE = 10V, TJ = 25°C

— 1000

VGE = 0V, VCE = 600V, TJ = 150°C

— ±100 nA VGE = ±20V

Switching Characteristics @ TJ = 25°C (unless otherwise specified)

Qg

Qge

Qgc

td(on)

tr

td(off)

tf

Eon

Eoff

Ets

td(on)

tr

td(off)

tf

Ets

LE

Cies

Coes

Cres

Notes:

Parameter

Total Gate Charge (turn-on)

Gate - Emitter Charge (turn-on)

Gate - Collector Charge (turn-on)

Turn-On Delay Time

Rise Time

Turn-Off Delay Time

Fall Time

Turn-On Switching Loss

Turn-Off Switching Loss

Total Switching Loss

Turn-On Delay Time

Rise Time

Turn-Off Delay Time

Fall Time

Total Switching Loss

Internal Emitter Inductance

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Min.

—

—

—

—

—

—

—

—

—

—

—

—

—

—

—

—

—

—

—

Typ.

15

2.6

5.8

19

11

116

81

0.08

0.16

0.24

18

14

180

150

0.36

7.5

270

21

3.5

Max.

22

4.0

8.7

—

—

240

180

—

—

0.36

—

—

—

—

—

—

—

—

—

Units

nC

ns

mJ

ns

mJ

nH

pF

Conditions

IC = 5.0A

VCC = 400V

See Fig. 8

VGE = 15V

TJ = 25°C

IC = 5.0A, VCC = 480V

VGE = 15V, RG = 100Ω

Energy losses include "tail"

See Fig. 9, 10, 14

TJ = 150°C,

IC = 5.0A, VCC = 480V

VGE = 15V, RG = 100Ω

Energy losses include "tail"

See Fig. 11, 14

Measured 5mm from package

VGE = 0V

VCC = 30V

See Fig. 7

ƒ = 1.0MHz

 Repetitive rating; VGE = 20V, pulse width limited by

max. junction temperature. ( See fig. 13b )

‚ VCC = 80%(VCES), VGE = 20V, L = 10µH, RG = 100Ω,

(See fig. 13a)

ƒ Repetitive rating; pulse width limited by maximum

junction temperature.

„ Pulse width ≤ 80µs; duty factor ≤ 0.1%.

… Pulse width 5.0µs, single shot.

2

www.irf.com

Share Link: