IRG4RC10U Ver la hoja de datos (PDF) - International Rectifier

Número de pieza

componentes Descripción

Lista de partido

IRG4RC10U

INSULATED GATE BIPOLAR TRANSISTOR UltraFast Speed IGBT

International Rectifier 

IRG4RC10U

1.0 RG = 110000ΩOhm

T J = 150° C

VCC = 480V

0.8 VGE = 15V

0.6

0.4

0.2

0.0

0

2

4

6

8

10

12

I C , Collector-to-emitter Current (A)

Fig. 11 - Typical Switching Losses vs.

Collector-to-Emitter Current

100

VGE = 20V

T J = 125 oC

10

SAFE OPERATING AREA

1

1

10

100

1000

VCE , Collector-to-Emitter Voltage (V)

Fig. 12 - Turn-Off SOA

L

D.U.T.

VC *

50V

1000V



‚

* Driver s am e ty pe a s D .U .T .; V c = 80 % of Vc e(m ax )

* Note: Due to the 5 0V pow e r supply, puls e w idth and inductor

w ill incre as e to obta in rated Id.

Fig. 13a - Clamped Inductive

Load Test Circuit

0 - 480V

480µF

960V

RL =

4

480V

X IC@25°C

Fig. 13b - Pulsed Collector

Current Test Circuit

IC

L

Driver*

VC

D.U.T.

Fig. 14a - Switching Loss

Test Circuit

50V

1000V



* Driver same type

as D.U.T., VC = 480V

‚

ƒ

6

www.irf.com

Share Link: