IRG4BC20W(2004) Ver la hoja de datos (PDF) - International Rectifier

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IRG4BC20W
(Rev.:2004)

INSULATED GATE BIPOLAR TRANSISTOR

International Rectifier 

IRG4BC20WPbF

25

20

15

Square wave:

60% of rated

voltage

10

For both:

Duty cycle: 50%

TJ = 125°C

Tsink = 90°C

Gate drive as specified

Power Dissipation = 13W

Triangular wave:

Clamp voltage:

80% of rated

5

0

0.1

Ideal diodes

1

10

100

f, Frequency (kHz)

A

1000

Fig. 1 - Typical Load Current vs. Frequency

(Load Current = IRMS of fundamental)

100

100

10

TJ = 150 °C

TJ = 25 °C

VGE = 15V

20µs PULSE WIDTH

1

1

10

VCE , Collector-to-Emitter Voltage (V)

Fig. 2 - Typical Output Characteristics

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TJ = 150 °C

10

TJ = 25 °C

VCC = 50V

5µs PULSE WIDTH

1

5

6

7

9

10

11

VGE, Gate-to-Emitter Voltage (V)

Fig. 3 - Typical Transfer Characteristics

3

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