SKW25N120 Ver la hoja de datos (PDF) - Infineon Technologies

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SKW25N120

Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode

Infineon Technologies 

SKW25N120

80A

60A

TJ=150°C

40A

TJ=25°C

20A

0A

0V

1V

2V

3V

4V

VF, FORWARD VOLTAGE

Figure 25. Typical diode forward current as

a function of forward voltage

3.0V

IF=50A

2.5V

2.0V

IF=25A

1.5V

IF=12A

1.0V

0.5V

0.0V

0°C

40°C

80°C 120°C

Tj, JUNCTION TEMPERATURE

Figure 26. Typical diode forward voltage as

a function of junction temperature

100K/W

D=0.5

0.2

0.1

10-1K/W 0.05

0.02

0.01

R,(K/W)

0.05339

0.40771

0.22473

0.46420

R1

τ, (s)

0.30438

0.09698

0.00521

0.00042

R2

single pulse

C1=τ1/R1 C2=τ2/R2

10-2K/W

10µs 100µs 1ms 10ms 100ms 1s

tp, PULSE WIDTH

Figure 27. Diode transient thermal

impedance as a function of pulse width

(D = tp / T)

Power Semiconductors

10

Rev. 2_1 Apr 06

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