SKW25N120 Ver la hoja de datos (PDF) - Infineon Technologies

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SKW25N120

Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode

Infineon Technologies 

SKW25N120

20V

Ciss

15V

1nF

10V

UCE=960V

5V

0V

0nC

100nC

200nC

300nC

QGE, GATE CHARGE

Figure 17. Typical gate charge

(IC = 25A)

Coss

100pF

0V

Crss

10V

20V

30V

VCE, COLLECTOR-EMITTER VOLTAGE

Figure 18. Typical capacitance as a

function of collector-emitter voltage

(VGE = 0V, f = 1MHz)

30µs

500A

25µs

20µs

15µs

10µs

5µs

400A

300A

200A

100A

0µs

10V 11V 12V 13V 14V 15V

VGE, GATE-EMITTER VOLTAGE

Figure 19. Short circuit withstand time as a

function of gate-emitter voltage

(VCE = 1200V, start at Tj = 25°C)

0A

10V 12V 14V 16V 18V 20V

VGE, GATE-EMITTER VOLTAGE

Figure 20. Typical short circuit collector

current as a function of gate-emitter voltage

(100V≤VCE ≤1200V, TC = 25°C, Tj ≤ 150°C)

Power Semiconductors

8

Rev. 2_1 Apr 06

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