VND5N07-E Ver la hoja de datos (PDF) - STMicroelectronics

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VND5N07-E

OMNIFET II fully autoprotected Power MOSFET

STMicroelectronics 

VND5N07-E

Electrical specifications

2.3

Electrical characteristics

Tcase = 25 °C unless otherwise stated.

Table 4. Off

Symbol

Parameter

Test conditions

VCLAMP

Drain-Source clamp

voltage

VIN = 0 V; ID = 200 mA

VCLTH

Drain-Source

threshold voltage

VIN = 0 V; ID = 2 mA

IISS

Supply current from

input pin

VDS = 0 V; VIN = 10 V

VINCL

Input-Source reverse

clamp voltage

IIN = 1 mA

Zero input voltage

IDSS

drain current

(VIN = 0 V)

VDS = 13 V; VIN = 0 V

VDS = 25 V; VIN = 0 V

Table 5. On(1)

Symbol

Parameter

Test conditions

RDS(on)

Static drain-source on

resistance

VIN =10 V; ID = 2.5 A

VIN = 5 V; ID = 2.5 A

VIN(th) Input threshold voltage VDS = Vin; ID + Iin = 1 mA

1. Pulsed: pulse duration = 300 µs, duty cycle 1.5%.

Min. Typ. Max. Unit

60 70 80 V

55

V

250 500 µA

-1.0

-0.3 V

50 µA

200 µA

Min. Typ. Max. Unit

200 mΩ

280 mΩ

0.8

3

V

Table 6. Dynamic

Symbol

Parameter

Test conditions

Min. Typ. Max. Unit

gfs (1)

Forward

transconductance

VDS = 13 V; ID = 2.5 A

3

4

S

COSS Output capacitance VDS = 13 V; f = 1 MHz; VIN = 0 V

200 300 pF

1. Pulsed: pulse duration = 300µs, duty cycle 1.5%.

Symbol

Parameter

td(on)

tr

td(off)

tf

Turn-on delay time

Rise time

Turn-off delay time

Fall time

Table 7. Switching(1)

Test conditions

VDD = 15 V; ID = 2.5 A;

Vgen = 10 V; Rgen = 10 Ω

Min. Typ. Max. Unit

50 100 ns

60 100 ns

150 300 ns

40 80 ns

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