VND5N07-E Ver la hoja de datos (PDF) - STMicroelectronics
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VND5N07-E Datasheet PDF : 22 Pages
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Electrical specifications
Symbol
Parameter
Table 7. Switching(1)
Test conditions
td(on) Turn-on delay time
tr
td(off)
Rise time
Turn-off delay time
VDD = 15 V; ID = 2.5 A;
Vgen = 10 V; Rgen = 1 kΩ
tf
Fall time
(dI/dt)on Turn-on current slope
VDD = 15 V; ID = 2.5 A;
Vin = 10 V; Rgen = 10 Ω
Qi Total input charge
VDD = 12 V; ID = 2.5 A;
VIN = 10 V
1. Parameters guaranteed by design / characterization.
VND5N07-E
Min. Typ. Max. Unit
150 250 ns
400 600 ns
3900 5000 ns
1100 1600 ns
80
A/µS
18
nC
Table 8. Source drain diode
Symbol
Parameter
Test conditions
VSD(1)
trr(2)
Qrr (2)
IRRM(2)
Forward on voltage ISD = 2.5 A; VIN = 0 V
Reverse recovery time
Reverse recovery
charge
Reverse recovery
current
ISD = 2.5 A; dI/dt = 100 A/µs;
VDD = 30 V
1. Pulsed: pulse duration = 300µs, duty cycle 1.5%.
2. Parameters guaranteed by design / characterization.
Min. Typ. Max. Unit
1.6 V
150
ns
0.3
µC
5.7
A
Table 9. Protections (-40°C < Tj < 150°C, unless otherwise specified)
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
Ilim
tdlim (1)
Tjsh (1)
Tjrs(1)
Igf(1)
Eas (1)
Drain current limit
Step response current
limit
Overtemperature
shutdown
VIN = 10 V; VDS = 13 V
VIN = 5 V; VDS = 13 V
VIN = 10 V
VIN = 5 V
Overtemperature reset
Fault sink current
Single pulse
avalanche energy
VIN = 10 V; VDS = 13 V
VIN = 5 V; VDS = 13 V
Starting Tj = 25°C; VDD = 20 V;
VIN = 10 V; Rgen = 1 kΩ;
L = 10 mH
3.5 5
3.5 5
15
40
150
135
50
20
0.2
7
A
7
A
20 µS
60 µS
°C
°C
mA
mA
J
1. Parameters guaranteed by design / characterization.
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