IKW15N120H3 Ver la hoja de datos (PDF) - Infineon Technologies

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IKW15N120H3

High speed DuoPack: IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel diode

Infineon Technologies 

IKW15N120H3

Highspeedswitchingseriesthirdgeneration

7

Eoff

Eon

Ets

6

5

4

5

Eoff

Eon

Ets

4

3

3

2

2

1

1

0

0

5

10

15

20

25

30

IC,COLLECTORCURRENT[A]

Figure 13. Typicalswitchingenergylossesasa

functionofcollectorcurrent

(ind.load,Tj=175°C,VCE=600V,VGE=15/0V,

rG=35Ω,testcircuitinFig.E)

0

10

30

50

70

90

110

rG,GATERESISTOR[Ω]

Figure 14. Typicalswitchingenergylossesasa

functionofgateresistor

(ind.load,Tj=175°C,VCE=600V,VGE=15/0V,

IC=15A,testcircuitinFig.E)

2.5

Eoff

Eon

Ets

2.0

1.5

3.5

Eoff

Eon

Ets

3.0

2.5

2.0

1.5

1.0

1.0

0.5

0.5

0.0

25

50

75 100 125 150 175

Tj,JUNCTIONTEMPERATURE[°C]

0.0

400

500

600

700

800

VCE,COLLECTOR-EMITTERVOLTAGE[V]

Figure 15. Typicalswitchingenergylossesasa

functionofjunctiontemperature

(indload,VCE=600V,VGE=15/0V,IC=15A,

rG=35Ω,testcircuitinFig.E)

Figure 16. Typicalswitchingenergylossesasa

functionofcollectoremittervoltage

(ind.load,Tj=175°C,VGE=15/0V,IC=15A,

rG=35Ω,testcircuitinFig.E)

10

Rev.2.1,2014-12-01

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