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IKW15N120H3

High speed DuoPack: IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel diode

Infineon Technologies 

IKW15N120H3

Highspeedswitchingseriesthirdgeneration

SwitchingCharacteristic,InductiveLoad

Parameter

Symbol Conditions

IGBTCharacteristic,atTvj=25°C

Turn-on delay time

td(on)

Rise time

tr

Turn-off delay time

td(off)

Fall time

tf

Turn-on energy

Eon

Turn-off energy

Eoff

Total switching energy

Ets

Tvj=25°C,

VCC=600V,IC=15.0A,

VGE=0.0/15.0V,

RG(on)=35.0Ω,RG(off)=35.0Ω,

Lσ=95nH,Cσ=67pF

Lσ,CσfromFig.E

Energy losses include “tail” and

diode reverse recovery.

Value

Unit

min. typ. max.

-

21

- ns

-

34

- ns

- 260 - ns

-

14

- ns

- 1.10 - mJ

- 0.45 - mJ

- 1.55 - mJ

DiodeCharacteristic,atTvj=25°C

Diode reverse recovery time

trr

Diode reverse recovery charge

Qrr

Diode peak reverse recovery current Irrm

Diode peak rate of fall of reverse

recoverycurrentduringtb

dirr/dt

Tvj=25°C,

VR=600V,

IF=15.0A,

diF/dt=500A/µs

- 260 - ns

- 0.80 - µC

- 7.7 - A

- -110 - A/µs

SwitchingCharacteristic,InductiveLoad

Parameter

Symbol Conditions

IGBTCharacteristic,atTvj=175°C

Turn-on delay time

td(on)

Rise time

tr

Turn-off delay time

td(off)

Fall time

tf

Turn-on energy

Eon

Turn-off energy

Eoff

Total switching energy

Ets

Tvj=175°C,

VCC=600V,IC=15.0A,

VGE=0.0/15.0V,

RG(on)=35.0Ω,RG(off)=35.0Ω,

Lσ=95nH,Cσ=67pF

Lσ,CσfromFig.E

Energy losses include “tail” and

diode reverse recovery.

Value

Unit

min. typ. max.

-

19

- ns

-

30

- ns

- 327 - ns

-

43

- ns

- 1.60 - mJ

- 0.90 - mJ

- 2.50 - mJ

DiodeCharacteristic,atTvj=175°C

Diode reverse recovery time

trr

Diode reverse recovery charge

Qrr

Diode peak reverse recovery current Irrm

Diode peak rate of fall of reverse

recoverycurrentduringtb

dirr/dt

Tvj=175°C,

VR=600V,

IF=15.0A,

diF/dt=500A/µs

- 470 - ns

- 1.70 - µC

- 9.8 - A

- -80 - A/µs

6

Rev.2.1,2014-12-01

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