FCH041N65F_F155 Ver la hoja de datos (PDF) - Fairchild Semiconductor
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FCH041N65F_F155 Datasheet PDF : 9 Pages
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Typical Performance Characteristics
Figure 1. On-Region Characteristics
500
VGS = 20.0V
15.0V
10.0V
100
8.0V
7.0V
6.5V
6.0V
5.5V
10
*Notes:
1. 250μs Pulse Test
2. TC = 25oC
1
0.1
1
10
VDS, Drain-Source Voltage[V]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
0.06
0.05
0.04
VGS = 10V
0.03
0
VGS = 20V
*Note: TC = 25oC
40
80 120 160 200 240
ID, Drain Current [A]
Figure 5. Capacitance Characteristics
100000
10000
Ciss
1000
Coss
100 *Note:
1. VGS = 0V
2. f = 1MHz
Crss
10 Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
1
0.1
1
10
100
VDS, Drain-Source Voltage [V]
1000
Figure 2. Transfer Characteristics
200
100
150oC
25oC
10
-55oC
*Notes:
1. VDS = 20V
2. 250μs Pulse Test
1
3
4
5
6
7
8
VGS, Gate-Source Voltage[V]
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
1000
100
150oC
10
25oC
1
0.1
0.01
0.001
0.0
*Notes:
1. VGS = 0V
2. 250μs Pulse Test
0.5
1.0
1.5
2.0
VSD, Body Diode Forward Voltage [V]
Figure 6. Gate Charge Characteristics
10
VDS = 130V
8
VDS = 325V
VDS = 520V
6
4
2
20 50
*Note: ID = 38A
100
150
200 240
Qg, Total Gate Charge [nC]
©2014 Fairchild Semiconductor Corporation
3
FCH041N65F Rev. C1
www.fairchildsemi.com
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