FCH041N65F_F155 Ver la hoja de datos (PDF) - Fairchild Semiconductor
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FCH041N65F_F155 Datasheet PDF : 9 Pages
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Typical Performance Characteristics (Continued)
Figure 7. Breakdown Voltage Variation
vs. Temperature
1.10
Figure 8. On-Resistance Variation
vs. Temperature
2.5
1.05
1.00
0.95
0.90
-75
*Notes:
1. VGS = 0V
2. ID = 10mA
-50 -25 0 25 50 75 100 125 150
TJ, Junction Temperature [oC]
Figure 9. Maximum Safe Operating Area
500
100
10
Operation in This Area
is Limited by R DS(on)
1
10μs
100μs
1ms
DC
0.1
0.01
1
*Notes:
1. TC = 25oC
2. TJ = 150oC
3. Single Pulse
10
100
VDS, Drain-Source Voltage [V]
1000
Figure 11. Eoss vs. Drain to Source Voltage
54.0
2.0
1.5
1.0
0.5
0.0
-75
*Notes:
1. VGS = 10V
2. ID = 38A
-50 -25 0 25 50 75 100 125 150
TJ, Junction Temperature [oC]
Figure 10. Maximum Drain Current
vs. Case Temperature
80
60
40
20
0
25
50
75
100
125
150
TC, Case Temperature [oC]
43.2
32.4
21.6
10.8
0
0
132
264
396
528
660
VDS, Drain to Source Voltage [V]
©2014 Fairchild Semiconductor Corporation
4
FCH041N65F Rev. C1
www.fairchildsemi.com
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