ESDALC6-4N4 Ver la hoja de datos (PDF) - STMicroelectronics
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ESDALC6-4N4 Datasheet PDF : 11 Pages
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Characteristics
1
Characteristics
ESDALC6-4N4
Table 1.
Symbol
Absolute maximum ratings (Tamb = 25 °C)
Parameter
Value
Unit
VPP ESD IEC 61000-4-2, level 4 (contact discharge)
11
kV
PPP Peak pulse power dissipation (8/20 µs)(1)
Tj initial = Tamb
27
W
Ipp Repetitive peak pulse current typical value (8/20 µs)
2.3
A
Tj Maximum junction temperature
125
°C
Tstg Storage temperature range
-55 + 150
°C
1. For a surge greater than the maximum values, the diode will fail in short-circuit.
Figure 2. Electrical characteristics (definitions)
I
IF
Symbol Parameter
VBR = Breakdown voltage
IRM = Leakage current @ VRM
VF
VRM =
VCL =
Stand-off voltage
Clamping voltage
VCL VBR VRM
IRM
V
IPP = Peak pulse current
Slope: 1/Rd
IPP
Symbol
Table 2.
Electrical characteristics (values, Tamb = 25 °C)
Test conditions
Min. Typ. Max. Unit
VBR IR = 1 mA
IRM VRM = 3 V
VCL Ipp = 1 A, 8/20 µs
C
VR = 0 V, F = 1 MHz, Vosc = 30 mV
6
V
70
nA
10
V
9.5 11
pF
2/11
Doc ID 022191 Rev 2
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