FCH077N65F_F155 Ver la hoja de datos (PDF) - Fairchild Semiconductor
Número de pieza
componentes Descripción
Lista de partido
FCH077N65F_F155 Datasheet PDF : 9 Pages
| |||
Package Marking and Ordering Information
Part Number
FCH077N65F_F155
Top Mark
FCH077N65F
Package Packing Method
TO-247 G03
Tube
Reel Size
N/A
Tape Width
N/A
Electrical Characteristics TC = 25oC unless otherwise noted.
Symbol
Parameter
Test Conditions
Min.
Off Characteristics
BVDSS
ΔBVDSS
/ ΔTJ
IDSS
IGSS
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Body Leakage Current
VGS = 0 V, ID = 1 mA, TJ = 25°C
650
VGS = 0 V, ID = 1 mA, TJ = 150°C
700
ID = 1 mA, Referenced to 25oC
-
VDS = 650 V, VGS = 0 V
-
VDS = 520 V, VGS = 0 V, TC = 125 oC
-
VGS = ±20 V, VDS = 0 V
-
On Characteristics
VGS(th)
Gate Threshold Voltage
VGS = VDS, ID = 5.4 mA
3
RDS(on)
Static Drain to Source On Resistance
VGS = 10 V, ID = 27 A
-
gFS
Forward Transconductance
VDS = 20 V, ID = 27 A
-
Dynamic Characteristics
Ciss
Coss
Crss
Coss
Coss(eff.)
Qg(tot)
Qgs
Qgd
ESR
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Effective Output Capacitance
Total Gate Charge at 10V
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
Equivalent Series Resistance
-
VDS = 100 V, VGS = 0 V,
f = 1 MHz
-
-
VDS = 380 V, VGS = 0 V, f = 1 MHz
-
VDS = 0 V to 400 V, VGS = 0 V
-
VDS = 380 V, ID = 27 A,
-
VGS = 10 V
-
(Note 4)
-
f = 1 MHz
-
Typ.
-
-
0.79
-
144
-
-
68
42
5345
165
0.8
97
693
126
28
53
0.7
Switching Characteristics
td(on)
tr
td(off)
tf
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
-
40
VDD = 380 V, ID = 27 A,
VGS = 10 V, Rg = 4.7 Ω
-
35
-
113
(Note 4)
-
5
Drain-Source Diode Characteristics
IS
Maximum Continuous Drain to Source Diode Forward Current
ISM
Maximum Pulsed Drain to Source Diode Forward Current
VSD
Drain to Source Diode Forward Voltage
VGS = 0 V, ISD = 27 A
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
VGS = 0 V, ISD = 27 A,
dIF/dt = 100 A/μs
Notes:
1. Repetitive rating: pulse width limited by maximum junction temperature.
2. IAS = 11 A, RG = 25 Ω, Starting TJ = 25°C.
3. ISD ≤ 27 A, di/dt ≤ 200 A/μs, VDD ≤ 380 V, Starting TJ = 25°C.
4. Essentially independent of operating temperature.
-
-
-
-
-
-
-
163
-
0.9
Quantity
30 units
Max. Unit
-
-
-
10
-
±100
V
V
V/oC
μA
nA
5
V
77
mΩ
-
S
7109 pF
220
pF
-
pF
-
pF
-
pF
164
nC
-
nC
-
nC
-
Ω
90
ns
80
ns
236
ns
20
ns
54
A
162
A
1.2
V
-
ns
-
μC
©2014 Fairchild Semiconductor Corporation
FCH077N65F Rev. C0
2
www.fairchildsemi.com
Share Link: 