FCH077N65F_F155 Ver la hoja de datos (PDF) - Fairchild Semiconductor
Número de pieza
componentes Descripción
Lista de partido
FCH077N65F_F155 Datasheet PDF : 9 Pages
| |||
Typical Performance Characteristics
Figure 1. On-Region Characteristics
1000
100
VGS = 10.0V
8.0V
7.0V
6.5V
6.0V
5.5V
10
*Notes:
1. 250μs Pulse Test
2. TC = 25oC
1
0.1
1
10 20
VDS, Drain-Source Voltage[V]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
0.14
*Note: TC = 25oC
0.12
0.10
0.08
VGS = 10V
0.06
0
VGS = 20V
32
64
96
128
160
ID, Drain Current [A]
Figure 5. Capacitance Characteristics
100000
10000
Ciss
1000
100
*Note:
10 1. VGS = 0V
2. f = 1MHz
Coss
1 Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
Crss
0.1
0.1
1
10
100
700
VDS, Drain-Source Voltage [V]
©2014 Fairchild Semiconductor Corporation
FCH077N65F Rev. C0
Figure 2. Transfer Characteristics
200
*Notes:
100
1. VDS = 20V
2. 250μs Pulse Test
150oC
10
25oC
-55oC
1
3
4
5
6
7
8
VGS, Gate-Source Voltage[V]
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
1000
100
*Notes:
1. VGS = 0V
2. 250μs Pulse Test
10
150oC
1
25oC
0.1
0.01
0.0010.0
0.4
0.8
1.2
1.6
2.0
VSD, Body Diode Forward Voltage [V]
Figure 6. Gate Charge Characteristics
10
*Note: ID = 27A
8
6
VDS = 130V
VDS = 325V
VDS = 520V
4
2
0
0
26
52
78
104
130
Qg, Total Gate Charge [nC]
3
www.fairchildsemi.com
Share Link: 