20N60 Ver la hoja de datos (PDF) - Unisonic Technologies

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20N60

20A, 600V N-CHANNEL POWER MOSFET

Unisonic Technologies 

20N60

Power MOSFET

 ABSOLUTE MAXIMUM RATINGS (TC =25°С, unless otherwise specified)

PARAMETER

SYMBOL

RATINGS

UNIT

Drain-Source Voltage

VDSS

600

V

Gate-Source Voltage

VGSS

±20

V

Drain Current

Continuous

Pulsed

ID

IDM

20

A

80

A

Avalanche Energy

Single Pulsed(Note 2)

EAS

1200

mJ

TO-247

370

Power Dissipation

TO-3P

PD

416

W

TO-230

260

Junction Temperature

TJ

+150

°C

Storage Temperature

TSTG

-55~+150

°C

Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

2. VDD=50V, Starting TJ=25°С, Peak IAS=20A, L=6mH

 THERMAL DATA

PARAMETER

TO-247

Junction to Ambient

TO-3P

TO-230

TO-247

Junction to Case

TO-3P

TO-230

SYMBOL

θJA

θJC

RATINGS

40

30

62.5

0.34

0.3

0.48

UNIT

°С/W

°С/W

UNISONIC TECHNOLOGIES CO., LTD

www.unisonic.com.tw

2 of 4

QW-R502-587.G

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