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20N60

20A, 600V N-CHANNEL POWER MOSFET

Unisonic Technologies 

20N60

Power MOSFET

 ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN TYP MAX UNIT

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

Drain-Source Leakage Current

Gate- Source Leakage Current

Forward

Reverse

BVDSS

IDSS

IGSS

ID=250µA, VGS=0V

VDS=600V, VGS=0V

VGS=+20V, VDS=0V

VGS=-20V, VDS=0V

600

V

10 µA

+100 nA

-100 nA

ON CHARACTERISTICS

Gate Threshold Voltage

Static Drain-Source On-State Resistance

VGS(TH)

RDS(ON)

VDS=VGS, ID=250µA

VGS=10V, ID=10A, Pulse test,

t≤300µs, duty cycle d≤2%

2

4.0 V

0.32 0.45 Ω

DYNAMIC PARAMETERS

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

CISS

COSS

CRSS

VGS=0V, VDS=25V, f=1MHz

4500

pF

330

pF

140

pF

SWITCHING PARAMETERS

Total Gate Charge

Gate to Source Charge

Gate to Drain Charge

Turn-ON Delay Time

Rise Time

Turn-OFF Delay Time

Fall-Time

QG

QGS

QGD

tD(ON)

tR

tD(OFF)

tF

VGS=10V, VDS=300V, ID=10A

(Note 1, 2)

VGS=10V, VDS=300V, ID=10A,RG=2Ω,

(Note 1, 2)

170 nC

40 nC

85 nC

110 40 ns

130 60 ns

800 90 ns

170 60 ns

SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS

Maximum Body-Diode Continuous

Current

IS

VGS=0V

Maximum Body-Diode Pulsed Current

ISM Repetitive

Drain-Source Diode Forward Voltage

VSD

IF=IS, VGS=0V, Pulse test,

t≤300µs, duty cycle d≤2%

Body Diode Reverse Recovery Time

trr

IF=IS,VR=100V,-di/dt=100A/µs(Note 1)

Notes: 1. Pulse Test: Pulse width ≤ 300μs, Duty cycle≤2%

2. Essentially independent of operating temperature

20 A

80 A

1.5 V

600

ns

UNISONIC TECHNOLOGIES CO., LTD

www.unisonic.com.tw

3 of 4

QW-R502-587.G

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