BUW11AF Ver la hoja de datos (PDF) - Philips Electronics
Número de pieza
componentes Descripción
Lista de partido
BUW11AF Datasheet PDF : 12 Pages
| |||
Philips Semiconductors
Silicon diffused power transistors
Product specification
BUW11F; BUW11AF
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
VCEOsust collector-emitter sustaining voltage IC = 100 mA; IBoff = 0; L = 25 mH;
BUW11F
see Figs 5 and 6
BUW11AF
VCEsat
VBEsat
ICsat
collector-emitter saturation voltage
BUW11F
BUW11AF
base-emitter saturation voltage
BUW11F
BUW11AF
collector saturation current
BUW11F
IC = 3 A; IB = 600 mA
IC = 2.5 A; IB = 500 mA
IC = 3 A; IB = 600 mA
IC = 2.5 A; IB = 500 mA
VCE = 1.5 V
BUW11AF
ICES
collector-emitter cut-off current
VCE = VCESMmax; VBE = 0; note 1
VCE = VCESMmax; VBE = 0;
Tj = 125 °C; note 1
IEBO
emitter-base cut-off current
VEB = 9 V; IC = 0
hFE
DC current gain
VCE = 5 V; IC = 5 mA; see Fig.7
VCE = 5 V; IC = 0.5 A; see Fig.7
Switching times resistive load (Figs 8 and 9)
ton
turn-on time
BUW11F
BUW11AF
ts
storage time
BUW11F
BUW11AF
tf
fall time
BUW11F
BUW11AF
ICon = 3 A; IBon = −IBoff = 600 mA
ICon = 2.5 A; IBon = −IBoff = 500 mA
ICon = 3 A; IBon = −IBoff = 600 mA
ICon = 2.5 A; IBon = −IBoff = 500 mA
ICon = 3 A; IBon = −IBoff = 600 mA
ICon = 2.5 A; IBon = −IBoff = 500 mA
Switching times inductive load (Figs 10 and 11)
ts
storage time
BUW11F
BUW11AF
tf
fall time
BUW11F
BUW11AF
ICon = 3 A; IB = 600 mA;
VCL = 250 V; Tc = 100 °C
ICon = 2.5 A; IB = 500 mA;
VCL = 300 V; Tc = 100 °C
ICon = 3 A; IB = 600 mA;
VCL = 250 V; Tc = 100 °C
ICon = 2.5 A; IB = 500 mA;
VCL = 300 V; Tc = 100 °C
Note
1. Measured with a half-sinewave voltage (curve tracer).
MIN. TYP. MAX. UNIT
400 −
−
V
450 −
−
V
−
−
1.5 V
−
−
1.5 V
−
−
1.4 V
−
−
1.4 V
−
−
3
A
−
−
2.5 A
−
−
1
mA
−
−
2
mA
−
−
10 mA
10 18 35
10 20 35
−
−
1
µs
−
−
1
µs
−
−
4
µs
−
−
4
µs
−
−
0.8 µs
−
−
0.8 µs
−
2
2.5 µs
−
2
2.5 µs
−
200 300 ns
−
200 300 ns
1997 Aug 14
4
Share Link: 