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BUW11AF

Silicon diffused power transistors

Philips Electronics 

Philips Semiconductors

Silicon diffused power transistors

Product specification

BUW11F; BUW11AF

handboo1k,0h2alfpage

hFE

10

VCE = 5 V

1V

MBC095

1

10−2

10−1

1

10

102

IC (A)

Tj = 125 °C.

Fig.7 DC current gain; typical values.

handbook, halfpage

VIM

0

tp

T

VCC

RL

RB

D.U.T.

MGE244

VCC = 250 V; tp = 20 µs; VIM = −6 to +8 V; tp/T = 0.01.

The values of RB and RL are selected in accordance with ICon and

IBon requirements.

Fig.8 Test circuit resistive load.

handbook, halfpage

90%

IB

10%

tr ≤30 ns

90%

IC

10%

ton

MBB731

IB on

t

IB off

IC on

tf

t

ts

tr ≤ 20 ns.

Fig.9 Switching time waveforms with

resistive load.

1997 Aug 14

andbook, halfpage

+IB

−VBE

VCC

LC

LB

D.U.T.

VCL

MGE246

VCL = up to 1000 V; VCC = 30 V; VBE = −1 V to −5 V; LB = 1 µH;

LC = 200 µH.

Fig.10 Test circuit inductive load and reverse

bias SOAR.

7

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