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IRGBC30K-S

UltraFast Fast IGBT

International Rectifier 

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IRGBC30K-S

30

20

Square wave:

60% of rated

voltage

10

For both:

Duty cycle: 50%

TJ = 125°C

Tsink = 90°C

Gate drive as specified

Power Dissipation = 21W

Triangular wave:

Clamp voltage:

80% of rated

Ideal diodes

0

A

0.1

1

10

100

f, Frequency (kHz)

Fig. 1 - Typical Load Current vs. Frequency

(For square wave, I=I RMS of fundamental; for triangular wave, I=I PK)

100

100

TJ = 25°C

10

TJ = 150°C

TJ = 150°C

10

TJ = 25°C

1

0.1

0.1

VGE = 15V

20µs PULSE WIDTH A

1

10

VCE , Collector-to-Emitter Voltage (V)

Fig. 2 - Typical Output Characteristics

VCC = 100V

1

5µs PULSE WIDTH A

5

10

15

20

VGE, Gate-to-Emitter Voltage (V)

Fig. 3 - Typical Transfer Characteristics

C-863

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