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IRGBC30K-S

UltraFast Fast IGBT

International Rectifier 

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IRGBC30K-S

1400

V GE = 0V,

f = 1MHz

Cies = Cge + C gc , Cce SHORTED

1200

Cres = C gc

Coes = Cce + C gc

1000

Cies

800

Coes

600

400

200

Cres

0

A

1

10

100

VCE, Collector-to-Emitter Voltage (V)

Fig. 7 - Typical Capacitance vs.

Collector-to-Emitter Voltage

0.80

VCC = 480V

VGE = 15V

TC = 25°C

0.76 I C = 14A

0.72

0.68

0.64

0.60

0

A

10

20

30

40

50

60

RG , Gate Resistance (Ω)

Fig. 9 - Typical Switching Losses vs. Gate

Resistance

20

VCE = 400V

IC = 14A

16

12

8

4

0

A

0

10

20

30

40

Qg, Total Gate Charge (nC)

Fig. 8 - Typical Gate Charge vs.

Gate-to-Emitter Voltage

10

RG = 23Ω

V GE = 15V

V CC = 480V

1

I C = 28A

I C = 14A

I C = 7.0A

0.1

A

-60 -40 -20 0 20 40 60 80 100 120 140 160

TC, Case Temperature (°C)

Fig. 10 - Typical Switching Losses vs.

Case Temperature

C-865

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