IRGBC20KD2-S Ver la hoja de datos (PDF) - International Rectifier
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IRGBC20KD2-S
International Rectifier
IRGBC20KD2-S Datasheet PDF : 10 Pages
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IRG4BC20KD-S
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)CES Collector-to-Emitter Breakdown VoltageS
∆V(BR)CES/∆TJ Temperature Coeff. of Breakdown Voltage
VCE(on)
Collector-to-Emitter Saturation Voltage
VGE(th)
∆VGE(th)/∆TJ
gfe
ICES
Gate Threshold Voltage
Temperature Coeff. of Threshold Voltage
Forward Transconductance T
Zero Gate Voltage Collector Current
VFM
Diode Forward Voltage Drop
IGES
Gate-to-Emitter Leakage Current
600 — — V VGE = 0V, IC = 250µA
— 0.49 — V/°C VGE = 0V, IC = 1.0mA
— 2.27 2.8
IC = 9.0A
VGE = 15V
— 3.01 — V IC = 16A
See Fig. 2, 5
— 2.43 —
IC = 9.0A, TJ = 150°C
3.0 — 6.0
VCE = VGE, IC = 250µA
— -10 — mV/°C VCE = VGE, IC = 250µA
2.9 4.3 — S VCE = 100V, IC = 9.0A
— — 250 µA VGE = 0V, VCE = 600V
— — 1000
VGE = 0V, VCE = 600V, TJ = 150°C
— 1.4 1.7 V IC = 8.0A
See Fig. 13
— 1.3 1.6
IC = 8.0A, TJ = 150°C
— — ±100 nA VGE = ±20V
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Qg
Qge
Qgc
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
tsc
td(on)
tr
td(off)
tf
Ets
LE
Cies
Coes
Cres
trr
Irr
Qrr
di(rec)M/dt
Parameter
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Short Circuit Withstand Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Switching Loss
Internal Emitter Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Diode Reverse Recovery Time
Diode Peak Reverse Recovery Current
Diode Reverse Recovery Charge
Diode Peak Rate of Fall of Recovery
During tb
Min. Typ. Max. Units
Conditions
— 34 51
IC = 9.0A
— 4.9 7.4 nC VCC = 400V
— 14 21
VGE = 15V
See Fig.8
— 54 —
— 34 — ns TJ = 25°C
— 180 270
IC = 9.0A, VCC = 480V
— 72 110
VGE = 15V, RG = 50Ω
— 0.34 —
Energy losses include "tail"
— 0.30 — mJ and diode reverse recovery
— 0.64 0.96
See Fig. 9,10,14
10 — —
— 51 —
µs VCC = 360V, TJ = 125°C
VGE = 15V, RG = 50Ω , VCPK < 500V
TJ = 150°C,
See Fig. 11,14
— 37 —
— 220 —
ns IC = 9.0A, VCC = 480V
VGE = 15V, RG = 50Ω
— 160 —
Energy losses include "tail"
— 0.85 — mJ and diode reverse recovery
— 7.5 — nH Measured 5mm from package
— 450 —
VGE = 0V
— 61 —
— 14 —
pF VCC = 30V
ƒ = 1.0MHz
See Fig. 7
— 37 55
— 55 90
ns TJ = 25°C See Fig.
TJ = 125°C 14
IF = 8.0A
— 3.5 5.0
— 4.5 8.0
A TJ = 25°C See Fig.
TJ = 125°C 15
VR = 200V
— 65 138 nC TJ = 25°C See Fig.
— 124 360
TJ = 125°C
16 di/dt = 200Aµs
— 240 — A/µs TJ = 25°C See Fig.
— 210 —
TJ = 125°C 17
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