IRGBC20KD2-S Ver la hoja de datos (PDF) - International Rectifier

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IRGBC20KD2-S

Short Circuit Rated UltraFast IGBT VCES= 600V VCE(on) typ. =2.27V @VGE= 15V, IC= 9.0A

International Rectifier 

800

 VGE = 0V, f = 1MHz

Cies = Cge + Cgc , Cce SHORTED

Cres = Cgc

Coes = Cce + Cgc

600

 Cies

400

200

0

1

C oes

C res

10

100

VCE , Collector-to-Emitter Voltage (V)

Fig. 7 - Typical Capacitance vs.

Collector-to-Emitter Voltage

0.8

 VCC = 480V

VGE = 15V

TJ = 25 ° C

IC = 9.0A

0.7

0.6

IRG4BC20KD-S

 20

VCC = 400V

I C = 9.0A

16

12

8

4

0

0

10

20

30

40

QG , Total Gate Charge (nC)

Fig. 8 - Typical Gate Charge vs.

Gate-to-Emitter Voltage

 10 RG 5=0OΩhm

VGE = 15V

VCC = 480V

 IC = 18A

1

 IC = 9.09AA

 IC = 4.5A

0.5

0

10

20

30

40

50

RRGG ,, GGaattee RReessisistatanncece( Ω(O)hm)

Fig. 9 - Typical Switching Losses vs. Gate

Resistance

www.irf.com

0.1

-60 -40 -20 0 20 40 60 80 100 120 140 160

TJ , Junction Temperature (° C )

Fig. 10 - Typical Switching Losses vs.

Junction Temperature

5

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