IRGBC20SD2 Ver la hoja de datos (PDF) - International Rectifier
Número de pieza
componentes Descripción
Lista de partido
IRGBC20SD2
International Rectifier
IRGBC20SD2 Datasheet PDF : 10 Pages
| |||
Previous Datasheet
IRGBC20SD2
Index
Next Data Sheet
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)CES Collector-to-Emitter Breakdown Voltage 600 ---- ---- V VGE = 0V, IC = 250µA
∆V(BR)CES/∆TJ Temperature Coeff. of Breakdown Voltage ---- 0.75 ---- V/°C VGE = 0V, IC = 1.0mA
VCE(on)
Collector-to-Emitter Saturation Voltage ---- 1.8 2.4
IC = 10A
VGE = 15V
----
----
VGE(th)
Gate Threshold Voltage
3.0
∆VGE(th)/∆TJ Temperature Coeff. of Threshold Voltage ----
gfe
Forward Transconductance
2.0
ICES
Zero Gate Voltage Collector Current
----
----
VFM
Diode Forward Voltage Drop
----
----
2.4 ---- V IC = 19A
1.9 ----
IC = 10A, TJ = 150°C
---- 5.5
VCE = VGE, IC = 250µA
-11 ---- mV/°C VCE = VGE, IC = 250µA
5.8 ---- S VCE = 100V, IC = 10A
---- 250 µA VGE = 0V, VCE = 600V
---- 1700
VGE = 0V, VCE = 600V, TJ = 150°C
1.4 1.7 V IC = 8.0A
1.3 1.6
IC = 8.0A, TJ = 150°C
IGES
Gate-to-Emitter Leakage Current
---- ---- ±100 nA VGE = ±20V
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Qg
Qge
Qgc
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
td(on)
tr
td(off)
tf
Ets
LE
Cies
Coes
Cres
trr
Irr
Qrr
di(rec)M/dt
Parameter
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Switching Loss
Internal Emitter Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Diode Reverse Recovery Time
Diode Peak Reverse Recovery Current
Diode Reverse Recovery Charge
Diode Peak Rate of Fall of Recovery
During tb
Min. Typ. Max.
---- 1.6 2.6
---- 2.3 4.0
---- 7.0 12
---- 72 ----
---- 69 ----
---- 820 ----
---- 910 ----
---- 0.70 ----
---- 3.9 ----
---- 4.6 ----
---- 78 ----
---- 90 ----
---- 1100 ----
---- 1800 ----
---- 7.0 ----
---- 7.5 ----
---- 360 ----
---- 36 ----
---- 5.2 ----
---- 37 55
---- 55 90
---- 3.5 5.0
---- 4.5 8.0
---- 65 138
---- 124 360
---- 240 ----
---- 210 ----
Units
nC
ns
mJ
ns
mJ
nH
pF
ns
A
nC
A/µs
Conditions
IC = 10A
VCC = 400V
TJ = 25°C
IC = 10A, VCC = 480V
VGE = 15V, RG = 5.0Ω
Energy losses include "tail" and
diode reverse recovery.
TJ = 150°C,
VGE = 15V, RG = 50Ω
Energy losses include "tail" and
diode reverse recovery.
Measured 5mm from package
VGE = 0V
VCC = 30V
ƒ = 1.0MHz
TJ = 25°C
TJ = 125°C
TJ = 25°C
IF = 8.0A
TJ = 125°C
VR = 200V
TJ = 25°C
TJ = 125°C
TJ = 25°C
TJ = 125°C
di/dt 200A/µs
To Order
Share Link: