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IRGBC20SD2

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Standard Speed CoPack

International Rectifier 

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IRGBC20SD2

4000

V GE = 0V,

f = 1MHz

C ies = C ge + C gc , Cce SHORTE D

C res = C gc

C oes = C ce + C gc

3000

C ie s

2000

C oes

1000

C re s

0

A

1

10

100

VCE, Collecto r-to-Em itte r Volta ge (V)

Fig. 7 - Typical Capacitance vs.

Collector-to-Emitter Voltage

20

VCE = 40 0V

IC = 20A

16

12

8

4

0

A

0

20

40

60

80

100

120

Qg , Total Gate Cha rge (nC)

Fig. 8 - Typical Gate Charge vs.

Gate-to-Emitter Voltage

1.8

VCC = 480V

VGE = 15V

T C = 25°C

I C = 20A

1.6

1.4

1.2

10

RG = 10 Ω

V GE = 15V

V CC = 480V

1

I C = 40A

IC = 20A

IC = 10A

1.0

0

A

10

20

30

40

50

60

R G , Gate Resistance ( Ω)

0.1

A

-60 -40 -20 0 20 40 60 80 100 120 140 160

TJ , Junction Temperature (°C)

Fig. 9 - Typical Switching Losses vs. Gate

Resistance

Fig. 10 - Typical Switching Losses vs.

Junction Temperature

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