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12N60

Bi-Directional Triode Thyristor Planar Silicon

Fairchild Semiconductor 

FKPF12N60 / FKPF12N80

Application Explanation

• Switching mode power supply, light dimmer, electric flasher unit, hair drier

• TV sets, stereo, refrigerator, washing machine

• Electric blanket, solenoid driver, small motor control

• Photo copier, electric tool

123

TO-220F

2

1: T1

2: T2

3: Gate

3

1

Bi-Directional Triode Thyristor Planar Silicon

Absolute Maximum Ratings TC=25°C unless otherwise noted

Symbol

Parameter

VDRM

Repetitive Peak Off-State Voltage (Note1 )

Rating

FKPF12N60

600

FKPF12N80

800

Units

V

Symbol

Parameter

IT (RMS) RMS On-State Current

ITSM

I2t

Surge On-State Current

I2t for Fusing

di/dt

PGM

PG (AV)

VGM

IGM

TJ

TSTG

Viso

Critical Rate of Rise of On-State Current

Peak Gate Power Dissipation

Average Gate Power Dissipation

Peak Gate Voltage

Peak Gate Current

Junction Temperature

Storage Temperature

Isolation Voltage

Conditions

Commercial frequency, sine full wave 360°

conduction, TC=82°C

60Hz sinewave 1 full cycle, peak value,

non-repetitive

Value corresponding to 1 cycle of halfwave

60Hz, surge on-state current

IG = 2x IGT, tr ≤ 100ns

TC = +80°C, Pulse Width = 1.0µs

TC = +80°C, t = 8.3ms

Pulse Width ≤ 1.0µsec; TC = 90°C

Ta=25°C, AC 1 minute, T1 T2 G terminal to

case

Rating

12

Units

A

120

A

60

A2s

50

5

0.5

10

2

- 40 ~ 125

- 40 ~ 125

1500

A/µs

W

W

V

A

°C

°C

V

Thermal Characteristic

Symbol

Parameter

Rth(J-C) Thermal Resistance

Test Condition

Junction to case (Note 4)

Min.

-

Typ.

-

Max. Units

3.0 °C/W

©2002 Fairchild Semiconductor Corporation

Rev. A1, December 2002

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