12N60 Ver la hoja de datos (PDF) - Fairchild Semiconductor
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12N60 Datasheet PDF : 7 Pages
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Electrical Characteristics TC=25°C unless otherwise noted
Symbol
Parameter
Test Condition
IDRM
VTM
Repetieive Peak Off-State Current
On-State Voltage
VDRM applied
TC=25°C, ITM=17A
Instantaneous measurement
I
VGT
Gate Trigger Voltage (Note 2)
II VD=6V, RL=6Ω,
III RG=330Ω
T2(+), Gate (+)
T2(+), Gate (-)
T2(-), Gate (-)
I
IGT
Gate Trigger Current (Note 2)
II VD=6V, RL=6Ω,
III RG=330Ω
T2(+), Gate (+)
T2(+), Gate (-)
T2(-), Gate (-)
VGD
Gate Non-Trigger Voltage
TJ=125°C, VD=1/2VDRM
IH
Holding Current
VD = 12V, ITM = 1A
IL
Latching Current
I, III VD = 12V, IG = 1.2IGT
II
dv/dt
Critical Rate of Rise of
Off-State Voltag
VDRM = Rated, Tj = 125°C,
Exponential Rise
(dv/dt)C Critical-Rate of Rise of Off-State
Commutating Voltage (Note 3)
Notes:
1. Gate Open
2. Measurement using the gate trigger characteristics measurement circuit
3. The critical-rate of rise of the off-state commutating voltage is shown in the table below
4. The contact thermal resistance RTH(c-f) in case of greasing is 0.5 °C/W
Min.
-
-
-
-
-
-
-
-
0.2
10
Typ.
-
-
Max.
20
1.5
Units
µA
V
-
1.5
V
-
1.5
V
-
1.5
V
-
30 mA
-
30 mA
-
30 mA
-
-
V
50 mA
50 mA
70 mA
300
V/µs
-
-
V/µs
VDRM
(V)
Test Condition
Commutating voltage and current waveforms
(inductive load)
FKPF12N60
FKPF12N80
1. Junction Temperature
TJ=125°C
2. Rate of decay of on-state
commutating current
(di/dt)C = - 6.0A/ms
3. Peak off-state voltage
VD = 400V
Supply Voltage
Main Current
Main Voltage
(dv/dt)C
Time
(di/dt)C
Time
Time
VD
Quadrant Definitions for a Triac
(+) T2
T2 Positive
+
(+) T2
Quadrant II
(+) IGT
GATE
T1
IGT -
(+) T2
(+) IGT
GATE
T1
(+) T2
Quadrant III (+) IGT
GATE
T1
(+) IGT
GATE
T1
-
T2 Negative
©2002 Fairchild Semiconductor Corporation
Quadrant I
+ IGT
Quadrant IV
Rev. A1, December 2002
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