SI4435DY Ver la hoja de datos (PDF) - Vishay Semiconductors
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SI4435DY Datasheet PDF : 5 Pages
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P-Channel 30-V (D-S) MOSFET
Si4435DY
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
rDS(on) (W)
0.02 @ VGS = –10 V
–30
0.035 @ VGS = –4.5 V
ID (A)
–8.0
–6.0
FEATURES
D Lead (Pb)-Free Version is RoHS
Compliant
S1
S2
S3
G4
SO-8
Top View
8D
7D
6D
5D
Ordering Information: Si4435DY-T1–REV A
Si4435DY-T1–A–E3 (Lead (Pb)-Free)
S
G
D
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25_ UNLESS OTHERWISE NOTED)
Parameter
Symbol
Limit
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150_C)a
Pulsed Drain Current
Continuous Source Current (Diode Conduction)a
Maximum Power Dissipationa
Operating Junction and Storage Temperature Range
TA = 25_C
TA = 70_C
TA = 25_C
TA = 70_C
VDS
VGS
ID
IDM
IS
PD
TJ, Tstg
–30
"20
–8.0
–6.4
–50
–2.1
2.5
1.6
–55 to 150
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Maximum Junction-to-Ambienta
RthJA
Notes
a. Surface Mounted on FR4 Board, t v 10 sec.
For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm
Limit
50
Unit
V
A
W
_C
Unit
_C/W
Document Number: 70149
S-51472—Rev. G, 01-Aug-05
www.vishay.com
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