SI4435DY Ver la hoja de datos (PDF) - Vishay Semiconductors
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SI4435DY Datasheet PDF : 5 Pages
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Si4435DY
Vishay Siliconix
SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Min Typa Max Unit
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Currentb
Drain-Source On-State Resistanceb
Forward Transconductanceb
Diode Forward Voltageb
Dynamica
VGS(th)
IGSS
IDSS
ID(on)
rDS(on)
gfs
VSD
VDS = VGS, ID = –250 mA
VDS = 0 V, VGS = "20 V
VDS = –30 V, VGS = 0 V
VDS = –30 V, VGS = 0 V, TJ = 70_C
VDS v –5 V, VGS = –10 V
VDS v –5 V, VGS = –4.5 V
VGS = –10 V, ID = –8.0 A
VGS = –4.5 V, ID = –5.0 A
VDS = –15 V, ID = –8.0 A
IS = –2.1 A, VGS = 0 V
–1.0
–2.0
–3.0
V
"100
nA
–1
mA
–5
–40
A
–10
0.015
0.02
W
0.022
0.035
20
S
–0.75
–1.2
V
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
Qg
Qgs
Qgd
RG
td(on)
tr
td(off)
tf
trr
VDS = –15 V, VGS = –10 V, ID = –4.6 A
VDD = –15 V, RL = 15 W
ID ^ –1 A, VGEN = –10 V, RG = 6 W
IF = –2.1 A, di/dt = 100 A/ms
47
60
9.5
nC
8
2.75
4.1
W
16
30
17
30
75
120
ns
31
80
40
80
Notes
a. Guaranteed by design, not subject to production testing. Values shown are for Product Revision A.
b. Pulse test; pulse width v 300 ms, duty cycle v 2%.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect device reliability.
www.vishay.com
2
Document Number: 70149
S-51472—Rev. G, 01-Aug-05
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