TG2211FT Ver la hoja de datos (PDF) - Toshiba
Número de pieza
componentes Descripción
Lista de partido
TG2211FT Datasheet PDF : 9 Pages
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TG2211FT
Electrical Characteristics
(VDD = 2.7 V, VCON(Hi) = 2.7 V, VCON(LO) = 0 V, Ta = 25°C, Zg = Zl = 50 W)
Characteristics
Insertion loss
between RFcom to RF1
between RFcom to RF2
Isolation
between RF1 to RF2
Input power at 1dB gain compression
Supply current
Control current
Switching time
Symbol
LOSS (1)
LOSS (2)
LOSS (3)
ISL (1)
ISL (2)
ISL (3)
ISL (4)
ISL (5)
ISL (6)
Pi1dB (1)
Pi1dB (2)
Pi1dB (3)
IDD
ICON
tsw
Test
Circuit
Test Condition
1 f = 1.0 GHz, Pi = 0dBmW
1 f = 2.0 GHz, Pi = 0dBmW
1 f = 2.5 GHz, Pi = 0dBmW
1 f = 1.0 GHz, Pi = 0dBmW
1 f = 2.0 GHz, Pi = 0dBmW
1 f = 2.5 GHz, Pi = 0dBmW
1 f = 1.0 GHz, Pi = 0dBmW
1 f = 2.0 GHz, Pi = 0dBmW
1 f = 2.5 GHz, Pi = 0dBmW
1 f = 1 GHz
1 f = 2 GHz
1 f = 2.5 GHz
¾ When no signal
¾ When no signal
1 f = 100 MHz, Pi = 0dBmW
Min Typ. Max Unit
¾ 0.45 0.75 dB
¾
0.5
0.8
dB
¾ 0.55 0.85 dB
20
25
¾
dB
20
25
¾
dB
20
24
¾
dB
20
25
¾
dB
17
20
¾
dB
14
17
¾
dB
17
23
¾
17
23
¾ dBmW
16
22
¾
¾ 0.20 0.35 mA
¾ 0.03 0.05 mA
¾
80
200
ns
Switch Condition (VDD = Hi)
Vcon potential
Internal connection
Rfcom – RF1
Rfcom – RF2
Hi
RFcom
RF2
ON
RF1
OFF
Low
RFcom
RF2
OFF
ON
RF1
2
2002-07-30
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