TG2211FT Ver la hoja de datos (PDF) - Toshiba

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TG2211FT

RF SPDT Switch

Toshiba 

TG2211FT

Pin Description

Pin No. Pin Symbol

Description

1

RF1

2

GND

3

RF2

4

VDD

5

RFcom

6

VCON

RF pin. Connect to RFcom when Vcon goes High. Connect a capacitor (C1) for blocking the internal

DC voltage of the IC.

GND pin. Ground in the vicinity of this pin.

RF pin. Connect to RFcom when Vcon goes Low. Connect a capacitor (C1) for blocking the internal

DC voltage of the IC.

Power supply pin and RF GND pin. When the device is operating, always apply the voltage of “High

level ” to this pin. This pin should be grounded by a capacitor (C3) as close as possible for RF

performance. The value of this capacitor affects the isolation. To protect RF signal leakage, connect

a 1-kW resistor (R).

RF pin. Connection can be switched to RF1 or RF2 by varying the level of the voltage applied to the

Vcon pin. Connect a capacitor (C1) for blocking the internal DC voltage of the IC.

Voltage control pin. The switch connections can be controlled by varying the level of the voltage to

this pin. Connect a bypass capacitor (C2) to this pin.

Caution

This device is sensitive to electrostatic discharge. When using this device, please ensure that all tools and

equipment are earthed.

Test Circuit 1 (RF Test Circuit)

RFcom

VCON

C2

C1

Top

view

R

C3

VDD

RF1 C1

GND

C1

RF2

C1: 56 pF

C2: 10 pF

C3: 4 pF

R: 1 kW

Please fix the value of each capacity for using frequency and circuit.

Reference Value of External Parts

50~300 MHz

300~500 MHz

0.5~2.5 GHz

Ｃ1

1000 pF

Ｃ2

100 pF

Ｃ3

100 pF

R

1 kW

100 pF

10 pF

100 pF

1 kW

56 pF

10 pF

4 pF

1 kW

3

2002-07-30

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