IRF720 Ver la hoja de datos (PDF) - New Jersey Semiconductor
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IRF720 Datasheet PDF : 3 Pages
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IRF720, IRF721, IRF722, IRF723 Devices
Absolute Maximum Ratings
Parameter
ID ® TC ™ 25°C
ID ® TC " 100°C
IOM
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current (0
PO @ ^C = 25°C
Max. Fbwer Dissipation
Linear Derating Factor
VQS
Gate-to-Source Voltage
EAS
Single Pulsa Avalanche Energy <S>
I AR
EAR
Avalanche Current ©
(Repetitive or Non-Repetitive)
Repetitive Avalanche Energy CD
Jv/ctt
- Peak Diode Recovery rfv/dt 0)
Tj
TSTG
Operating Junction
Storage Temperature Range
Lead Temperature
IRF720, IRF721
3.3
2.1
13
IRF722. IRR23
2.8
. . 1.8 . - -
11
60 '
0.40
±20
190
{See Fig. 14)
3.3
(See EAR)
5.0
(See IAR)
4.0
(See Rg. 17)
-66 to 150
300 (0.063 In. 0.6mm) from case lor 10s)
Units
A
A
A
W
VWK®
V
mj
A
mj
Vfns
°C
°C
Electrical Characteristics @ T, = 25°C (Unless Otherwise Specified)
Parameter
BVoss Drain-to-Source Breakdown voltage
Fine/nut Static Drain-to-Source
On-State Resistance 9)
'Dion) On-State Drain Current ®
VGS(th) Gate Threshold Voltage
gfs
Forward Transconductance ®
'DSS Ze[0 Gate voltagu Drain Current
Type Win. Typ. Max. Units
Test Conditions
IRF720
IRF722
400
-
-
V vGS - ov, iD - 250 ^A
IRF721
IRF723
350
IRF720
IRF72I
-
IRF722
IRF723
-
1.6
1.8
1.8 2.5
0 vGS - iov, iD = I.SA
IRR20
IRR21
3.3
IRF722
IRF723
2.B
-
-
A
VDS > bton) x "DSIon) Max.
VGS = 10V
ALL 2.0 - 4.0 V VDS = VGS. 'D - ZS<VA
ALL 1.8 2.7 - SID) IDS = i.8A, VDS a wv
ALL
-
—
-
250
liA
VOS = Max. Rating, VQS = OV
—
1000
Vrjs ~ 0.8 X Max Rating
VCS - OV, Tj - 125°C
1GSS
IQSS
Qg
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
QgS
Qgd
'dtonl
t,
Gate-to-Source Charge
Gate-to-Draln ("Mlller'1 Charge
Turn-On Delay Time
Rise Time
ALL
-
ALL
-
-
500
nA VQS = 2°V
-
-500
nA VGS = -20V
ALL
-
13
20
nC VGS - 1"v. ID - 33A
VQS * 0.8 x Max. Rating
ALL
-
2.2
3.3
nC See Rg. 16
-
7.2
11
nC (Independent of operating temperature)
ALL
-
10
15
ns vDD = 2oov, iD - 3.3A, RG = ien
ALL
-
14
21
ns RD = sen
'd(off) Turn-Off Delay Time
ALL
-
30
45
ns Ses Rg. 15
t|
Fall Time
Lrj
Internal Drain Inductance
ALL -
13
20
ns (Independent of operating temperature)
ALL
4.5
nH Measured from the drain
lead, 6mm (0.25 in.) from
package to center of die.
Modified MOSFET symbol
showing the internal
inductances.
~ — It
Lg
Internal Source Inductance
ALL
7.6
nH Measuredfromthe source
lead, 6mm 10.25 in.) from
package to source bonding
/ itl i
i , IT...
\ KT
Cjgg
COS3
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
ALL
-
350
-
PF
VGS = "« VDS - 25V
ALL
-
64
--
pF f = 1.0 MHi
ALL
-
8.1
-
pF See Fig. 10
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