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IRHE3110

100V, N-CHANNEL RADIATION HARDENED POWER MOSFET SURFACE MOUNT(LCC-18)

International Rectifier 

PRraed-iIartriaodniaCthioanracteristics

IRHE7110

International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.

The hardness assurance program at International Rectifier is comprised of two radiation environments.

Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both

pre- and post-irradiation performance are tested and specified using the same drive circuitry and test

conditions in order to provide a direct comparison.

Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation ➄➅

Parameter

100K Rads(Si)1

300 - 1000K Rads (Si) Units

Min Max Min Max

Test Conditions

BVDSS Drain-to-Source Breakdown Voltage 100

VGS(th) Gate Threshold Voltage

2.0

IGSS

Gate-to-Source Leakage Forward —

IGSS

Gate-to-Source Leakage Reverse —

IDSS

Zero Gate Voltage Drain Current

—

RDS(on) Static Drain-to-Source ➃

—

On-State Resistance (TO-3)

RDS(on) Static Drain-to-Source ➃

—

On-State Resistance (LCC-18)

VSD

Diode Forward Voltage ➃

—

—

4.0

100

-100

25

0.60

0.60

1.5

100

1.25

—V

4.5

— 100 nA

— -100

— 25 µA

— 0.80 Ω

— 0.80 Ω

— 1.5 V

VGS = 0V, ID = 1.0mA

VGS = VDS, ID = 1.0mA

VGS = 20V

VGS = -20 V

VDS=80V, VGS =0V

VGS = 12V, ID =2.2A

VGS = 12V, ID =2.2A

VGS = 0V, IS = 3.5A

1. Part numbers IRHE7110

2. Part number IRHE3110, IRHE4110, IRHE8110

International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for

Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.

Table 2. Single Event Effect Safe Operating Area

Ion

LET

Energy Range

VDS(V)

MeV/(mg/cm2)) (MeV)

(µm) @VGS=0V @VGS=-5V@VGS=-10V@VGS=-15V@VGS=-20V

Cu

28

285

43

100

100

100

80

60

Br

36.8

305

39

100

90

70

50

—

120

100

80

Cu

60

Br

40

20

0

0

-5

-10

-15

-20

-25

VGS

Fig a. Single Event Effect, Safe Operating Area

For footnotes refer to the last page

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