IRHE3110 Ver la hoja de datos (PDF) - International Rectifier

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IRHE3110

100V, N-CHANNEL RADIATION HARDENED POWER MOSFET SURFACE MOUNT(LCC-18)

International Rectifier 

Pores-tI-rIrraaddiiaattiioonn

IRHE7110

Fig 5. Typical Zero Gate Voltage Drain

Current Vs. Total Dose Exposure

Fig 6. Typical On-State Resistance Vs.

Neutron Fluence Level

Fig 8a. Gate Stress of

VGSS Equals 12 Volts During

Radiation

Fig 7. Typical Transient Response

of Rad Hard HEXFET During 1x1012

Rad (Si)/Sec Exposure

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Fig 8b. VDSS Stress Equals

80% of BVDSS During Radiation

5

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