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PBSS301NZ Datasheet PDF : 14 Pages
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NXP Semiconductors
PBSS301NZ
12 V, 5.8 A NPN low VCEsat (BISS) transistor
5. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min
VCBO
collector-base voltage open emitter
-
VCEO
collector-emitter voltage open base
-
VEBO
emitter-base voltage
open collector
-
IC
collector current
-
ICM
peak collector current single pulse;
-
tp ≤ 1 ms
Ptot
total power dissipation Tamb ≤ 25 °C
[1] -
[2] -
[3] -
Tj
junction temperature
-
Tamb
ambient temperature
−65
Tstg
storage temperature
−65
Max Unit
12
V
12
V
5
V
5.8
A
11.6
A
0.7
W
1.7
W
2
W
150
°C
+150 °C
+150 °C
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm2.
[3] Device mounted on a ceramic PCB, Al2O3, standard footprint.
2.5
Ptot
(W)
(1)
2.0
(2)
1.5
006aaa560
1.0
(3)
0.5
0
−75
−25
25
75
(1) Ceramic PCB, Al2O3, standard footprint
(2) FR4 PCB, mounting pad for collector 6 cm2
(3) FR4 PCB, standard footprint
Fig 1. Power derating curves
125
175
Tamb (°C)
PBSS301NZ_2
Product data sheet
Rev. 02 — 17 November 2009
© NXP B.V. 2009. All rights reserved.
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