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PBSS301NZ-135 Datasheet PDF : 14 Pages
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NXP Semiconductors
PBSS301NZ
12 V, 5.8 A NPN low VCEsat (BISS) transistor
7. Characteristics
Table 7. Characteristics
Tamb = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
ICBO
IEBO
collector-base cut-off VCB = 12 V; IE = 0 A
current
VCB = 12 V; IE = 0 A;
Tj = 150 °C
emitter-base cut-off VEB = 5 V; IC = 0 A
current
hFE
VCEsat
RCEsat
VBEsat
VBEon
DC current gain
VCE = 2 V; IC = 0.5 A
VCE = 2 V; IC = 1 A
VCE = 2 V; IC = 2 A
VCE = 2 V; IC = 4 A
VCE = 2 V; IC = 7 A
collector-emitter
saturation voltage
IC = 0.5 A; IB = 50 mA
IC = 1 A; IB = 50 mA
IC = 1 A; IB = 10 mA
IC = 2 A; IB = 40 mA
IC = 4 A; IB = 200 mA
IC = 4 A; IB = 400 mA
IC = 4 A; IB = 40 mA
IC = 5.8 A; IB = 290 mA
collector-emitter
IC = 4 A; IB = 200 mA
saturation resistance IC = 4 A; IB = 40 mA
base-emitter
saturation voltage
IC = 1 A; IB = 100 mA
IC = 4 A; IB = 400 mA
base-emitter turn-on VCE = 2 V; IC = 2 A
voltage
td
delay time
tr
rise time
ton
turn-on time
VCC = 12.5 V; IC = 3 A;
IBon = 0.15 A;
IBoff = −0.15 A
ts
storage time
tf
fall time
toff
turn-off time
fT
transition frequency VCE = 10 V; IC = 100 mA;
f = 100 MHz
Cc
collector capacitance VCB = 10 V; IE = ie = 0 A;
f = 1 MHz
[1] Pulse test: tp ≤ 300 μs; δ ≤ 0.02.
Min
-
-
-
[1] 300
[1] 300
[1] 250
[1] 200
[1] 200
[1] -
[1] -
[1] -
[1] -
[1] -
[1] -
[1] -
[1] -
[1] -
[1] -
[1] -
[1] -
[1] -
-
-
-
-
-
-
-
-
Typ Max Unit
-
100 nA
-
50
μA
-
100 nA
530 -
520 -
480 -
420 -
290 -
18
25
mV
35
50
mV
50
70
mV
70
100 mV
120 170 mV
115 165 mV
135 210 mV
165 235 mV
30
43
mΩ
35
52
mΩ
0.81 0.9 V
0.92 1.05 V
0.75 0.85 V
15
-
40
-
55
-
195 -
75
-
270 -
140 -
ns
ns
ns
ns
ns
ns
MHz
125 160 pF
PBSS301NZ_2
Product data sheet
Rev. 02 — 17 November 2009
© NXP B.V. 2009. All rights reserved.
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