PBSS301NZ-135 Ver la hoja de datos (PDF) - NXP Semiconductors.
Número de pieza
componentes Descripción
Lista de partido
PBSS301NZ-135 Datasheet PDF : 14 Pages
| |||
NXP Semiconductors
PBSS301NZ
12 V, 5.8 A NPN low VCEsat (BISS) transistor
1000
hFE
800 (1)
(2)
600
006aaa564
400
(3)
200
0
10−1
1
10
102
103
104
IC (mA)
VCE = 2 V
(1) Tamb = 100 °C
(2) Tamb = 25 °C
(3) Tamb = −55 °C
Fig 5. DC current gain as a function of collector
current; typical values
1.2
VBE
(V)
0.8
(1)
006aaa565
(2)
0.4
(3)
14
IC
(A)
12
10
8
6
4
2
0
0
1
2
Tamb = 25 °C
006aaa570
IB (mA) = 50
45
40
35
30
25
20
15
10
5
3
4
5
VCE (V)
Fig 6. Collector current as a function of
collector-emitter voltage; typical values
1.2
VBEsat
(V)
0.8
(1)
006aaa568
(2)
0.4 (3)
0
10−1
1
10
102
103
104
IC (mA)
0
10−1
1
10
102
103
104
IC (mA)
VCE = 2 V
(1) Tamb = −55 °C
(2) Tamb = 25 °C
(3) Tamb = 100 °C
Fig 7. Base-emitter voltage as a function of collector
current; typical values
IC/IB = 20
(1) Tamb = −55 °C
(2) Tamb = 25 °C
(3) Tamb = 100 °C
Fig 8. Base-emitter saturation voltage as a function
of collector current; typical values
PBSS301NZ_2
Product data sheet
Rev. 02 — 17 November 2009
© NXP B.V. 2009. All rights reserved.
7 of 14
Share Link: 