JANTX2N6806 Ver la hoja de datos (PDF) - TE Connectivity

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Lista de partido

JANTX2N6806

SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, P-CHANNEL, SILICON

TE Connectivity 

MIL-PRF-19500/562C

TABLE I. Group A inspection.

Inspection 1/

Subgroup 1

Visual and mechanical

inspection

Subgroup 2

Thermal impedance 2/

Breakdown voltage, drain to

source

2N6804

2N6806

Gate to source voltage

(threshold)

Gate reverse current

Drain current

Static drain to source

on-state resistance

2N6804

2N6806

Drain to source on-state

resistance

2N6804

2N6806

Forward voltage (source

drain diode)

2N6804

2N6806

Method

MIL-STD-750

Conditions

2071

Symbol

Limits

Min

Max

3161 See 4.5.3

3407

VGS = 0 V; ID = -1.0 mA dc Bias

condition C

3403 VDS ≥ VGS; ID = -0.25 mA dc

ZθJC

V(BR)DSS

VGS(th)1

-100

-200

-2.0

3411

3413

3421

3421

4011

Bias condition C; VDS = 0 V;

VGS = +20 and -20 V dc

IGSS1

VGS = 0; bias condition C;

VDS = 0 V; VDS = 80 percent of rated

VDS

IDSS1

VGS = -10 V dc; condition A, pulsed

(see 4.5.1)

rDS(on)1

ID = -7 A dc

ID = -4 A dc

VGS = -10 V dc; condition A, pulsed

(see 4.5.1)

rDS(on)2

ID = -11 A dc

ID = -6.5 A dc

Pulsed (see 4.5.1), VGS = 0 V

VSD

For devices with a multiple diode

structure

IS = -11 A dc

IS = -6.5 A dc

1.2

-4.0

±100

-25

0.30

0.80

0.36

0.94

-4.7

-6.0

Unit

°C/W

V dc

V dc

nA dc

µA dc

Ω

Ω

V

V

See footnote at end of table.

11

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