IRF250 Ver la hoja de datos (PDF) - Intersil

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IRF250

30A, 200V, 0.085 Ohm, N-Channel Power MOSFET

Intersil 

INCHANGE Semiconductor

isc N-Channel MOSFET Transistor

isc Product Specification

IRF250

DESCRIPTION

·Drain Current –ID=30A@ TC=25℃

·Drain Source Voltage-

: VDSS= 200V(Min)

·Static Drain-Source On-Resistance

: RDS(on) =0.085Ω(Max)

·Nanosecond Switching Speed

APPLICATIONS

·Switching power supplies

·Switching converters,motor driver,relay driver

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE UNIT

VDSS

VGS

ID

Ptot

Tj

Tstg

Drain-Source Voltage (VGS=0)

200

V

Gate-Source Voltage

±20

V

Drain Current-continuous@ TC=25℃

30

A

Total Dissipation@TC=25℃

150

W

Max. Operating Junction Temperature

150

℃

Storage Temperature Range

-55~150 ℃

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX UNIT

Rth j-c

Rth j-a

Thermal Resistance,Junction to Case

Thermal Resistance,Junction to Ambient

0.83

30

℃/W

℃/W

isc website：www.iscsemi.cn

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