IRF250 Ver la hoja de datos (PDF) - Intersil
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IRF250 Datasheet PDF : 2 Pages
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INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
·ELECTRICAL CHARACTERISTICS (TC=25℃)
SYMBOL
PARAMETER
CONDITIONS
V(BR)DSS Drain-Source Breakdown Voltage VGS=0; ID=250µA
VGS(TH) Gate Threshold Voltage
VDS= VGS; ID=250µA
RDS(ON) Drain-Source On-stage Resistance VGS=10V; ID=16A
IGSS
Gate Source Leakage Current
VGS=±20V;VDS=0
IDSS
Zero Gate Voltage Drain Current
VDS=200V; VGS=0
VSD
Diode Forward Voltage
IS=30A; VGS=0
Ciss
Input Capacitance
Crss
Reverse Transfer Capacitance
Coss
Output Capacitance
VDS=25V;
VGS=0V;
fT=1MHz
tr
Rise Time
td(on)
Turn-on Delay Time
tf
Fall Time
ID=16A;
VDD=95V;
RL=4.7Ω
td(off)
Turn-off Delay Time
isc Product Specification
IRF250
MIN TYPE MAX UNIT
200
V
2
4
V
0.085 Ω
±100 nA
250
uA
2.0
V
2000 3000
300
500
pF
800 1200
100
35
ns
100
125
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