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SKB15N60HS

High Speed IGBT in NPT-technology

Infineon Technologies 

SKB15N60HS

td(off)

100ns

tf

10ns

td(on)

tr

1ns

0A

10A

20A

IC, COLLECTOR CURRENT

Figure 9. Typical switching times as a

function of collector current

(inductive load, TJ=150°C,

VCE=400V, VGE=0/15V, RG=23Ω,

Dynamic test circuit in Figure E)

100 ns

td(off)

tf

td(on)

10 ns

tr

1 ns

0Ω 10Ω 20Ω 30Ω 40Ω 50Ω

RG, GATE RESISTOR

Figure 10. Typical switching times as a

function of gate resistor

(inductive load, TJ=150°C,

VCE=400V, VGE=0/15V, IC=15A,

Dynamic test circuit in Figure E)

100ns

td(off)

10ns

0°C

50°C

100°C

tf

tr

td(on)

150°C

TJ, JUNCTION TEMPERATURE

Figure 11. Typical switching times as a

function of junction temperature

(inductive load, VCE=400V,

VGE=0/15V, IC=15A, RG=23Ω,

Dynamic test circuit in Figure E)

5.0V

4.5V

4.0V

max.

3.5V

3.0V

typ.

2.5V

min.

2.0V

1.5V

-50°C

0°C

50°C 100°C 150°C

TJ, JUNCTION TEMPERATURE

Figure 12. Gate-emitter threshold voltage as

a function of junction temperature

(IC = 0.5mA)

Power Semiconductors

7

Rev 2.3 Oct. 07

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