BAV170 Ver la hoja de datos (PDF) - Galaxy Semi-Conductor
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BAV170 Datasheet PDF : 4 Pages
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Production specification
Low-leakage double diode
BAV170
FEATURES
z Plastic SMD package
Pb
z Low leakage current: typ. 3pA
Lead-free
z Switching time: typ. 0.8us
z Continuous reverse voltage: max. 75V
z Repetitive peak reverse voltage: max. 85V
z Repetitive peak forward current: max. 500mA
APPLICATIONS
z Low-leakage current applications in surface mounted circuits
SOT-23
ORDERING INFORMATION
Type No.
Marking
BAV170
JX
Package Code
SOT-23
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
Characteristic
Symbol
Limits
Unit
Repetitive Peak Reverse Voltage
DC Reverse Voltage
VRRM
85
V
VR
75
V
Forward Continuous Current single diode loaded
215
double diode loaded IF
125
mA
repetitive peak forward current
non-repetitive peak forward current square wave;
Tj=25C prior to surge;
tp=1μs
tp=1ms
tp=1s
Total Power Dissipation
Operating Junction Temperature Range
Storage Temperature Range
IFRM
IFSM
Ptot
Tj
TSTG
500
mA
4
1
A
0.5
250
mW
150
℃
-65 to +125
℃
C038
Rev.A
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