BAV170 Ver la hoja de datos (PDF) - Galaxy Semi-Conductor

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Lista de partido

BAV170

Low-leakage double diode

Galaxy Semi-Conductor 

Production specification

Low-leakage double diode

BAV170

ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified

Characteristic

Forward Voltage

Reverse Leakage Current

Junction Capacitance

Reverse Recovery Time

Symbol Typ

VF

0.003

IR

3

Cj

2

trr

0.8

MAX

900

1000

1100

1250

5

80

3

UNIT

mV

nA

pF

μs

Test Condition

IF=1mA

IF=10mA

IF=50mA

IF=150mA

VR=75V

VR=75V,TJ=150℃

VR=0V,f=1.0MHz

IF=IR=10mA,Irr=0.1*IR

TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified

C038

Rev.A

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