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IRG4PC50U

INSULATED GATE BIPOLAR TRANSISTOR UltraFast Speed IGBT

International Rectifier 

IRG4PC50U

80

60

Square wave:

40

60% of rated

voltage

For both:

Du ty c yc le: 5 0%

TJ = 125°C

Tsink = 90°C

G a te d rive a s sp ec ified

Po w e r D is sip atio n = 40 W

Triangular wave:

C la m p vo lta g e :

8 0 % o f ra te d

20

Ideal diodes

0

A

0.1

1

10

100

f, Frequency (kHz)

Fig. 1 - Typical Load Current vs. Frequency

(For square wave, I=IRMS of fundamental; for triangular wave, I=IPK)

1000

1000

100

TJ = 1 5 0 °C

10

TJ = 2 5 °C

1

0.1

0

VGE = 15V

20µs PULSE W ID TH A

1

10

VC E , C o lle c to r-to -E m itte r V o lta g e (V )

Fig. 2 - Typical Output Characteristics

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100

TJ = 150°C

TJ = 25°C

10

VCC = 10V

1

5µs PULSE W IDTHA

4

6

8

10

12

VG E , G a te -to -E m itte r V o lta g e (V )

Fig. 3 - Typical Transfer Characteristics

3

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