IRG4PC50U Ver la hoja de datos (PDF) - International Rectifier

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IRG4PC50U

INSULATED GATE BIPOLAR TRANSISTOR UltraFast Speed IGBT

International Rectifier 

IRG4PC50U

8000

V GE = 0V,

f = 1MHz

C ies = C ge + C gc , C ce SHORTED

C res = C gc

C oes = C ce + C gc

6000

C ie s

4000

C oes

2000

C res

0

A

1

10

100

VC E , C o lle cto r-to -E m itte r V o lta g e (V )

Fig. 7 - Typical Capacitance vs.

Collector-to-Emitter Voltage

20

VCE = 400V

IC = 27A

16

12

8

4

0

A

0

40

80

120

160

200

Qg , Total Gate Charge (nC)

Fig. 8 - Typical Gate Charge vs.

Gate-to-Emitter Voltage

2.2

VCC = 480V

VGE = 15V

2.0 TJ = 25°C

IC = 27A

1.8

1.6

1.4

1.2

1.0

0.8

0.6

0

A

10

20

30

40

50

60

R G, Gate Resistance ( Ω)

Fig. 9 - Typical Switching Losses vs. Gate

Resistance

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10

R G = 5 .0 Ω

V GE = 15V

V CC = 480V

1

IC = 5 4A

IC = 27A

IC = 1 4 A

0.1

A

-60 -40 -20 0 20 40 60 80 100 120 140 160

TJ , J u n ctio n T e m p e ra tu re (°C )

Fig. 10 - Typical Switching Losses vs.

Junction Temperature

5

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