FCPF11N60F_13 Ver la hoja de datos (PDF) - Fairchild Semiconductor
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FCPF11N60F_13 Datasheet PDF : 10 Pages
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FCPF11N60F
N-Channel SuperFET® FRFET® MOSFET
600 V, 11 A, 380 mΩ
November 2013
Features
• 600 V @ TJ = 150°C
• Typ. RDS(on) = 320 mΩ
• Fast Recovery Type (trr = 120 ns)
• Ultra Low Gate Charge (Typ. Qg = 40 nC)
• Low Effective Output Capacitance (Typ. Coss(eff.) = 95 pF)
• 100% Avalanche Tested
• RoHS compliant
Applications
• LCD/LED/PDP TV
• Lighting
• Solar Inverter
• AC-DC Power Supply
Description
SuperFET® MOSFET is Fairchild Semiconductor’s first genera-
tion of high voltage super-junction (SJ) MOSFET family that is
utilizing charge balance technology for outstanding low on-
resistance and lower gate charge performance. This technology
is tailored to minimize conduction loss, provide superior switch-
ing performance, dv/dt rate and higher avalanche energy. Con-
sequently, SuperFET MOSFET is very suitable for the switching
power applications such as PFC, server/telecom power, FPD
TV power, ATX power and industrial power applications. Super-
FET FRFET® MOSFET’s optimized body diode reverse recov-
ery performance can remove additional component and
improve system reliability.
D
GDS
G
TO-220F
MOSFET Maximum Ratings TC = 25oC unless otherwise noted.
Symbol
Parameter
VDSS
ID
IDM
VGSS
EAS
IAR
EAR
dv/dt
PD
Drain to Source Voltage
Drain Current
Drain Current
- Continuous (TC = 25oC)
- Continuous (TC = 100oC)
- Pulsed
Gate to Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation
(TC = 25oC)
- Derate Above 25oC
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
TJ, TSTG
TL
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering,
1/8” from Case for 5 Seconds
* Drain current limited by maximum junction termperature.
Thermal Characteristics
Symbol
RθJC
RθJA
Parameter
Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Junction to Ambient, Max.
©2008 Fairchild Semiconductor Corporation
1
FCPF11N60F Rev. C1
S
FCPF11N60F
600
11*
7*
33*
±30
340
11
12.5
4.5
36
0.29
-55 to +150
300
Unit
V
A
A
V
mJ
A
mJ
V/ns
W
W/oC
oC
oC
FCPF11N60F
3.5
62.5
Unit
oC/W
oC/W
www.fairchildsemi.com
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