G20N60HS Ver la hoja de datos (PDF) - Infineon Technologies

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G20N60HS

High Speed IGBT in NPT-technology

Infineon Technologies 

SGP20N60HS

SGW20N60HS

τr11

Tj (t)

p(t)

r1

τ2

r2

r2

τrnn

rn

TC

Figure D. Thermal equivalent

circuit

Figure A. Definition of switching times

Figure B. Definition of switching losses

Published by

Infineon Technologies AG,

Power Semiconductors

10

Figure E. Dynamic test circuit

Leakage inductance Lσ =60nH

an d Stray capacity Cσ =40pF.

Rev.2 Aug-02

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