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G20N60HS

High Speed IGBT in NPT-technology

Infineon Technologies 

SGP20N60HS

SGW20N60HS

Switching Characteristic, Inductive Load, at Tj=25 °C

Parameter

IGBT Characteristic

Turn-on delay time

Rise time

Turn-off delay time

Fall time

Turn-on energy

Turn-off energy

Total switching energy

Symbol

Conditions

min.

td(on)

Tj=25°C,

-

tr

td(off)

VCC=400V,IC=20A,

VGE=0/15V,

RG=16Ω

-

-

tf

Lσ1) =60nH,

-

Eon

Cσ1) =40pF

Energy losses include

-

Eoff

“tail” and diode

-

Ets

reverse recovery.

-

Value

typ.

18

15

207

13

0.39

0.30

0.69

Unit

max.

ns

mJ

Switching Characteristic, Inductive Load, at Tj=150 °C

Parameter

IGBT Characteristic

Turn-on delay time

Rise time

Turn-off delay time

Fall time

Turn-on energy

Turn-off energy

Total switching energy

Turn-on delay time

Rise time

Turn-off delay time

Fall time

Turn-on energy

Turn-off energy

Total switching energy

Symbol

Conditions

min.

td(on)

Tj=150°C

-

tr

td(off)

VCC=400V,IC=20A,

VGE=0/15V,

RG= 2.2Ω

-

-

tf

Lσ1) =60nH,

-

Eon

Cσ1) =40pF

Energy losses include

-

Eoff

“tail” and diode

-

Ets

reverse recovery.

-

td(on)

Tj=150°C

-

tr

td(off)

VCC=400V,IC=20A,

VGE=0/15V,

RG= 16Ω

-

-

tf

Lσ1) =60nH,

-

Eon

Cσ1) =40pF

Energy losses include

-

Eoff

“tail” and diode

-

Ets

reverse recovery.

-

Value

typ.

15

8.5

65

35

0.46

0.24

0.7

17

13

222

13

0.6

0.36

0.96

Unit

max.

ns

mJ

ns

mJ

1) Leakage inductance L σ an d Stray capacity Cσ due to test circuit in Figure E.

Power Semiconductors

3

Rev.2 Aug-02

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