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VNS3NV04D-E

OMNIFET II fully autoprotected Power MOSFET

STMicroelectronics 

VNS3NV04D-E

OMNIFET II

fully autoprotected Power MOSFET

Features

Max On-State resistance (per ch.)

Current limitation (typ)

Drain-Source clamp voltage

RON

ILIMH

VCLAMP

120mΩ

3.5A

40V

■ Linear current limitation

■ Thermal shut down

■ Short circuit protection

■ Integrated clamp

■ Low current drawn from input pin

■ Diagnostic feedback through input pin

■ Esd protection

■ Direct access to the gate of the power mosfet

(analog driving)

■ Compatible with standard power mosfet

SO-8

Description

The VNS3NV04D-E is a device formed by two

monolithic OMNIFET II chips housed in a

standard SO-8 package. The OMNIFET II are

designed in STMicroelectronics VIPower M0-3

Technology: they are intended for replacement of

standard Power MOSFETs from DC up to 50KHz

applications. Built in thermal shutdown, linear

current limitation and overvoltage clamp protects

the chip in harsh environments.

Fault feedback can be detected by monitoring the

voltage at the input pin.

Table 1. Device summary

Package

SO-8

Tube

VNS3NV04D-E

Order codes

Tape and Reel

VNS3NV04DTR-E

July 2007

Rev 2

1/21

www.st.com

21

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