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VNS3NV04D-E

OMNIFET II fully autoprotected Power MOSFET

STMicroelectronics 

Electrical specifications

2

Electrical specifications

Figure 3. Current and voltage conventions

IIN1

RIN1

VIN1

IIN2

VIN2

RIN2

INPUT 1

INPUT 2

SOURCE 1

DRAIN 1

DRAIN 2

SOURCE 2

VNS3NV04D-E

ID1

ID2

VDS1

VDS1

2.1

Absolute maximum ratings

Stressing the device above the rating listed in the “Absolute maximum ratings” table may

cause permanent damage to the device. These are stress ratings only and operation of the

device at these or any other conditions above those indicated in the operating sections of

this specification is not implied. Exposure to Absolute maximum rating conditions for

extended periods may affect device reliability. Refer also to the STMicroelectronics SURE

program and other relevant quality document.

Table 2. Absolute maximum ratings

Symbol

Parameter

VDSn

VINn

IINn

RIN MINn

IDn

IRn

VESD1

VESD2

Drain-Source Voltage (VINn=0V)

Input voltage

Input current

Minimum input series impedance

Drain current

Reverse DC output current

Electrostatic discharge (R=1.5KΩ, C=100pF)

Electrostatic discharge on output pins only (R=330Ω,

C=150pF)

Ptot Total dissipation at Tc=25°C

Tj

Operating junction temperature

Tc Case operating temperature

Tstg Storage temperature

Value

Unit

Internally clamped

V

Internally clamped

V

+/-20

mA

220

Ω

Internally limited

A

-5.5

A

4000

V

16500

V

4

Ω

Internally limited

°C

Internally limited

°C

-55 to 150

°C

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