MCR8DSMT4 Ver la hoja de datos (PDF) - Kersemi Electronic Co., Ltd.
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MCR8DSMT4 Datasheet PDF : 6 Pages
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MCR8DSM, MCR8DSN
100
TYPICAL @ TJ = 25°C
10
1.0
MAXIMUM @ TJ = 110°C
0.1
MAXIMUM @ TJ = 25°C
1.0
ZqJC(t) = RqJC(t)Sr(t)
0.1
0
1.0
2.0
3.0
4.0
5.0
VT, INSTANTANEOUS ON−STATE VOLTAGE (VOLTS)
Figure 3. On−State Characteristics
0.01
0.1
1.0
10
100
t, TIME (ms)
1000
10 K
Figure 4. Transient Thermal Response
1000
1.0
RGK = 1.0 KW
100
GATE OPEN
10
1.0
−40 −25
−10 5.0 20 35 50 65 80
TJ, JUNCTION TEMPERATURE (°C)
95 110
Figure 5. Typical Gate Trigger Current versus
Junction Temperature
0.1
−40 −25 −10 5.0 20 35 50 65 80 95 110
TJ, JUNCTION TEMPERATURE (°C)
Figure 6. Typical Gate Trigger Voltage versus
Junction Temperature
10
10
RGK = 1.0 KW
RGK = 1.0 KW
1.0
1.0
0.1
−40 −25
−10 5.0 20 35 50 65 80
TJ, JUNCTION TEMPERATURE (°C)
95 110
Figure 7. Typical Holding Current versus
Junction Temperature
0.1
−40 −25
−10 5.0 20 35 50 65 80
TJ, JUNCTION TEMPERATURE (°C)
95 110
Figure 8. Typical Latching Current versus
Junction Temperature
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